Limit of validity of the drift-diffusion approximation for simulation of photodiode characteristics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1650033
Reference19 articles.
1. Silicon microphotonics
2. Transit‐Time Considerations in p—i—n Diodes
3. Ultrawide-band long-wavelength p-i-n photodetectors
4. Analysis of InGaAs p-i-n photodiode frequency response
5. Nonstationary and nonlinear response of a p-i-n photodiode made of a two-valley semiconductor
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