Electron paramagnetic resonance of radiation defects in hydrogen-implanted silicon detected by spin-dependent microwave photoconductivity
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124233
Reference12 articles.
1. Paramagnetic centres in proton-irradiated silicon
2. Low-symmetry EPR center in hydrogen-implanted silicon
3. Electron paramagnetic resonance of molecular hydrogen in silicon
4. Spin-1 Centers in Neutron-Irradiated Silicon
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1. Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers;Journal of Applied Physics;2018-01-31
2. Effects of Spin-Dependent Recombination and EPR Spectroscopy of the Excited Triplet States of Point Defects in Silicon;Applied Magnetic Resonance;2016-06-02
3. Spin-dependent recombination at arsenic donors in ion-implanted silicon;Applied Physics Letters;2014-09-15
4. Optical and dynamic nuclear polarization of29Si nuclei via photoexcited triplet states of oxygen-vacancy complexes in isotopically controlled silicon;Physical Review B;2013-02-06
5. Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface;Applied Physics Letters;2012-04-09
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