Numerical simulation of the tunneling current and ballistic electron effects in field emission devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372215
Reference11 articles.
1. Boundary-element method for the calculation of electronic states in semiconductor nanostructures
2. Use of boundary element methods in field emission computations
3. Scattering-theoretic approach to elastic one-electron tunneling through localized barriers: Application to scanning tunneling microscopy
4. Analytic evaluation of field emission enhancement factors for ellipsoidal cones and elliptic cross-section wedges
5. Deviations from the Fowler–Nordheim theory and peculiarities of field electron emission from small-scale objects
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3. Proposal of Field-Emission Device Surrounded by High-$k$Dielectric and Performance Prospects;Journal of Display Technology;2006-09
4. Reduction of the number of electrons emitted backwardsin back-gated devices for field emission: A theoretical study;Applied Physics Letters;2004-08-02
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