5 V driving organic non-volatile memory transistors with poly(vinyl alcohol) gate insulator and poly(3-hexylthiophene) channel layers-Reference-Cited by-同舟云学术

5 V driving organic non-volatile memory transistors with poly(vinyl alcohol) gate insulator and poly(3-hexylthiophene) channel layers

Published:2015-10-12 Issue:15 Volume:107 Page:153302
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nam Sungho¹²,Seo Jooyeok¹,Kim Hwajeong¹³,Kim Youngkyoo¹

Affiliation:

1. Organic Nanoelectronics Laboratory, Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701, South Korea

2. Center for Plastic Electronics, Department of Physics, Blackett Laboratory, Imperial College London, London SW6 2AZ, United Kingdom

3. Research Institute of Advanced Energy Technology, Kyungpook National University, Daegu 702-701, South Korea

Funder

National Research Foundation of Korea (NRF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4932048

Reference32 articles.

1. Nonvolatile Memory Elements Based on Organic Materials

2. Polymer and Organic Nonvolatile Memory Devices

3. Polymer electronic memories: Materials, devices and mechanisms

4. Organic Nonvolatile Memory Devices Based on Ferroelectricity

5. Towards printable organic thin film transistor based flash memory devices

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