Tunneling behavior of extremely low resistance nonalloyed Ti/Pt/Au contacts ton(p)‐InGaAs andn‐InAs/InGaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354986
Reference12 articles.
1. Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy
2. Extremely low nonalloyed and alloyed contact resistance using an InAs cap layer on InGaAs by molecular‐beam epitaxy
3. Heavily Si-doped InGaAs lattice-matched to InP grown by MBE
4. A reliable fabrication technique for very low resistance ohmic contacts top-InGaAs using low energy Ar+ ion beam sputtering
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2. Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing*;Chinese Physics B;2021-02-01
3. The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation;Sensors;2019-08-02
4. Low resistance, unannealed ohmic contacts to n-type InAs0.66Sb0.34;Electronics Letters;2007
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