Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2952051
Reference11 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. Substrates for gallium nitride epitaxy
3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
4. Electrical properties ofp-type GaN:Mg codoped with oxygen
5. Effects of Mg accumulation on chemical and electronic properties of Mg-dopedp-type GaN surface
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2. A systematic study on the efficacy of low-temperature GaN regrown on p-GaN to suppress Mg out-diffusion;Frontiers in Materials;2023-12-05
3. Growth of Nitrides on Nearly Lattice-Matched Substrate ScAlMgO4 and its Application;2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK);2023-11-16
4. Hole mobility limiting factors in dopant-free p-type distributed polarization-doped AlGaN;Applied Physics Letters;2023-06-19
5. Significant improvement of injection efficiency in deep-UV LD structures by light Mg doping in p-core layer;Japanese Journal of Applied Physics;2023-03-14
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