Cryogenic instrumentation for fast current measurement in a silicon single electron transistor-Reference-Cited by-同舟云学术

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Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

Published:2009-08 Issue:3 Volume:106 Page:033705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ferrus T.,Hasko D. G.,Morrissey Q. R.,Burge S. R.,Freeman E. J.,French M. J.,Lam A.,Creswell L.,Collier R. J.,Williams D. A.,Briggs G. A. D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3191671

Reference29 articles.

1. The Physical Implementation of Quantum Computation

2. Coulomb blockade of single-electron tunneling, and coherent oscillations in small tunnel junctions

3. Real-time detection of electron tunnelling in a quantum dot

4. The Radio-Frequency Single-Electron Transistor (RF-SET): A Fast and Ultrasensitive Electrometer

5. Single shot measurement of a silicon single electron transistor

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microwave-dependent quantum transport characteristics in near pinched-off GaN/AlGaN field-effect transistors;Physical Review B;2024-07-17

2. Erratum: Corrigendum: Observation and coherent control of interface-induced electronic resonances in a field-effect transistor;Nature Materials;2017-08

3. Quantum information density scaling and qubit operation time constraints of CMOS silicon-based quantum computer architectures;npj Quantum Information;2017-06-26

4. GHz photon-activated hopping between localized states in a silicon quantum dot;New Journal of Physics;2014-01-13

5. Low-Noise Current Measurements on Quantum Devices Operating at Cryogenic Temperature;Single-Atom Nanoelectronics;2013-04-17

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