Selective area growth of InGaN-based nanocolumn LED crystals on AlN/Si substrates useful for integrated μ-LED fabrication
Author:
Affiliation:
1. Department of Engineering and Applied Science, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
2. Sophia Nanotechnology Research Center, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
Funder
Sophia University
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5022298
Reference20 articles.
1. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy
2. Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns
3. InGaN/GaN nanocolumn LEDs emitting from blue to red
4. Origin of high oscillator strength in green-emitting InGaN∕GaN nanocolumns
5. Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns
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