Small valence band offset in (010) InS∕CuI heterojunction diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2753094
Reference13 articles.
1. Practical doping principles
2. On the CdS/CuInSe2 conduction band discontinuity
3. Pressure dependence of the optical properties and the band structure of the copper and silver halides
4. Carrier Transport Properties of InS Single Crystals
5. Preparation and Properties of InS Single Crystals
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1. l-Alanine capping of ZnO nanorods: increased carrier concentration in ZnO/CuI heterojunction diode;RSC Advances;2018
2. Low temperature preparation p-CuI/n-ZnO wide gap heterojunction diode;Optik - International Journal for Light and Electron Optics;2015-10
3. Cuprous iodide - a p-type transparent semiconductor: history and novel applications;physica status solidi (a);2013-08-12
4. Valence band offset at interfaces between CuI and indium sulfides;Journal of Applied Physics;2008-05-15
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