Quasiballistic transport in GaAs-based heterojunction and homojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368740
Reference12 articles.
1. Diffusion in a short base
2. A microscopic study of transport in thin base silicon bipolar transistors
3. Solution of the Boltzmann transport equation in an arbitrary one-dimensional-potential profile
4. An analytical expression for the current in short-base transistors
5. Effects of quasi-ballistic base transport on the high-frequency characteristics of bipolar transistors
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