GaAs junction field effect transitors for low‐temperature environments
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1135322
Reference4 articles.
1. Semiconductor devices suitable for use in cryogenic environments
2. Low temperature noise in most amplifiers
3. Temperature dependence of low-frequency excess noise in junction-gate FET's
4. Junction Field Effect Transistors at 4.2 K
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Low temperature proton irradiation of GaAs MESFETs;IEEE Transactions on Nuclear Science;1993-12
2. Noise measurements on silicon J‐FETs at low temperature using a very high Q superconducting resonator;Review of Scientific Instruments;1991-11
3. Analog multiplexer for cryogenic applications;Cryogenics;1989-05
4. Feasibility of a cryogenic multiplexer for spaceborne applications;Cryogenics;1987-01
5. Cryogenic Instrumentation with Cold Electronics — a Review;Advances in Cryogenic Engineering;1986
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