Bandgap engineering of GaN nanowires-Reference-Cited by-同舟云学术

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Bandgap engineering of GaN nanowires

Published:2016-05 Issue:5 Volume:6 Page:055018
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Ming Bang-Ming¹,Wang Ru-Zhi¹²^ORCID,Yam Chi-Yung²,Xu Li-Chun³,Lau Woon-Ming²⁴,Yan Hui¹

Affiliation:

1. College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China

2. Beijing Computational Science Research Center, Beijing, 100094, China

3. College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China

4. Chengdu Green Energy and Green Manufacturing Technology R&D Center, Chengdu, Sichuan, 610207, China

Funder

Importation and Development of High-Caliber Talents Project of Berjing Municipal Institutions

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4951678

Reference30 articles.

1. Comparison of plasma etch techniques for III–V nitrides

2. GaN Electronics

3. Logic Gates and Computation from Assembled Nanowire Building Blocks

4. Nanowire electronic and optoelectronic devices

5. Single gallium nitride nanowire lasers

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1. Phonon-mode-specific lattice dynamical coupling of carriers in semiconductors using Raman and optical spectroscopic techniques;Physical Review B;2022-08-29

2. Size dependent polaritonic effects in GaN microrod studied through optical property investigation;Optik;2021-08

3. Effect of pore-size disorder on the electronic properties of semiconducting graphene nanomeshes;Nanotechnology;2020-09-16

4. Comparison of optoelectronic properties of epitaxial and non-epitaxial GaN nanostructures;Journal of Materials Science: Materials in Electronics;2020-07-10

5. Stress induced modification of electronic band structure and enhanced optical emission in 1-D GaN nanostructures;Solid State Sciences;2020-07

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