Field dependence of barrier heights and luminescence properties in polar and nonpolar InGaN/GaN single quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3258649
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1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
3. Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes
4. Quantum-confined Stark effects in the m-plane In0.15Ga0.85N∕GaN multiple quantum well blue light-emitting diode fabricated on low defect density freestanding GaN substrate
5. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
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2. Evaluation of {112̄2} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions;Japanese Journal of Applied Physics;2013-08-01
3. Efficiency Enhancement in a-Plane InGaN/GaN Light Emitters with Carbon Nanotubes;Journal of Nanoscience and Nanotechnology;2012-04-01
4. Linearly Polarized Light Emission from InGaN/GaN Quantum Well Structure with High Indium Composition;Journal of Nanoscience and Nanotechnology;2011-10-01
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