Carrier concentration dependence of acceptor activation energy in p-type ZnO
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2206700
Reference17 articles.
1. Fabrication of p-type ZnO thin films via MOCVD method by using phosphorus as dopant source
2. The near band-edge emission and photoconductivity response of phosphorus-doped ZnO thin films grown by pulsed laser deposition
3. Pulsed-laser-deposited p-type ZnO films with phosphorus doping
4. Synthesis of p-type ZnO films
5. Preparation of As-doped p-type ZnO films using a Zn3As2∕ZnO target with pulsed laser deposition
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