Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects-Reference-Cited by-同舟云学术

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Numerical modeling of InGaN/GaN p-i-n solar cells under temperature and hydrostatic pressure effects

Published:2019-04 Issue:4 Volume:9 Page:045313
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Chouchen Bilel¹^ORCID,Gazzah Mohamed Hichem¹^ORCID,Bajahzar Abdullah²,Belmabrouk Hafedh³⁴^ORCID

Affiliation:

1. Quantum and Statistical Physics Laboratory, Faculty of Sciences of Monastir, University of Monastir, Monastir 5019, Tunisia

2. Department of Computer Science and Information, College of Science, Majmaah University, Zulfi 11932, Saudi Arabia

3. Electronics and Microelectronics Laboratory, Faculty of Science of Monastir, University of Monastir, Monastir 5019, Tunisia

4. Department of Physics, College of Science, Majmaah University, Al Zulfi 11932, Saudi Arabia

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5092236

Reference49 articles.

1. Optical and structural properties of III-V nitrides under pressure

2. High temperature dependence of the density of two-dimensional electron gas in Al0.18Ga0.82N/GaN heterostructures

3. Numerical Study on the Influence of Piezoelectric Polarization on the Performance of p-on-n (0001)-Face GaN/InGaN p-i-n Solar Cells

4. Photovoltaic conversion efficiency of InN/In x Ga 1-x N quantum dot intermediate band solar cells

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Infrared relative dielectric permittivity and refractive index on the spherical CdSe/ZnS heteronanocrystals with self-consistent field;Physica Scripta;2024-03-22

2. Numerical investigation of Auger current density in a InGaN/GaN multiple quantum well solar cell under hydrostatic pressure;Indian Journal of Physics;2023-09-11

3. Exploring the electronic properties of shallow donor impurities in modified ∩-shaped potential: effects of applied electric field, parabolicity, compositions, and thickness;The European Physical Journal B;2023-06

4. X-Rays Diffraction Study of InGaN/GaN Heterostructures Grown by MOCVD Technique at Different Temperatures;Defect and Diffusion Forum;2023-05-31

5. Effect of hydrostatic pressure on the Auger coefficient of InGaN/GaN multiple-quantum-well laser diode;Journal of Nanophotonics;2023-05-23

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