Sodium passivation dependence on phosphorus concentration in tetraethylorthosilicate plasma‐enhanced chemical vapor deposited phosphosilicate glasses
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353104
Reference6 articles.
1. Ion Transport Phenomena in Insulating Films
2. Sodium distribution in thermal oxide on silicon by radiochemical and MOS analysis
3. Stabilization of SiO2 Passivation Layers with P2O5
4. Stress in silicon dioxide films deposited using chemical vapor deposition techniques and the effect of annealing on these stresses
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1. High quality interlayer dielectric for 4H–SiC DMOSFETs;Semiconductor Science and Technology;2007-10-02
2. Chemical Vapor Deposition;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09
3. Mechanism of high density plasma chemical vapor deposition phosphosilicate glass process without in-situ plasma chamber clean;Thin Solid Films;2004-12
4. The formation of inorganic oxide insulators for use in ULSIs formed from organic sources;Materials Science and Engineering: B;2004-08
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