The doping concentration dependence of zinc and tin in InGaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342499
Reference19 articles.
1. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
2. Fast photoconductive detector using p‐In0.53Ga0.47As with response to 1.7 μm
3. A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current
4. Two‐dimensional electron gas in a In0.53Ga0.47As‐InP heterojunction grown by metalorganic chemical vapor deposition
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+p junction devices;Journal of Applied Physics;2000-04
2. InGaAs‐GaAs‐AlGaAs strained‐layer laser with heavy silicon doping;Journal of Applied Physics;1991-07-15
3. Photoluminescence of Zn‐diffused and annealed InP;Journal of Applied Physics;1989-12
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