Effect of thermionic‐field emission on effective barrier height lowering in In0.52Al0.48As Schottky diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109638
Reference9 articles.
1. 650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors
2. Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs
3. A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT
4. Characteristics of Schottky diodes on AlxIn1-xAs grown by MOCVD
5. Control of Schottky barrier height using highly doped surface layers
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