Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation

Author:

Lopez R.,Boatner L. A.,Haynes T. E.,Haglund R. F.,Feldman L. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 96 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Phase Change-Induced Magnetic Switching through Metal–Insulator Transition in VO2/TbFeCo Films;Nanomaterials;2023-10-27

2. Facile Fabrication of High-Performance Thermochromic VO2-Based Films on Si for Application in Phase-Change Devices;Chemistry of Materials;2023-05-30

3. First-principle investigation of CO adsorption on Pd-loaded VO2 monolayer;Materials Today Communications;2022-08

4. Ultra-high phase transition amplitude of Fe-doped high-performance VO2 films manufactured by DC-magnetron sputtering for modulation application;Seventh Asia Pacific Conference on Optics Manufacture and 2021 International Forum of Young Scientists on Advanced Optical Manufacturing (APCOM and YSAOM 2021);2022-02-15

5. Inherent stochasticity during insulator–metal transition in VO2;Proceedings of the National Academy of Sciences;2021-09-07

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