Very‐low‐pressure deposition by electron cyclotron resonance plasma chemical vapor deposition method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346082
Reference9 articles.
1. Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma
2. Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy
3. Low Temperature Preparation of Hydrogenated Amorphous Silicon by Microwave Electron-Cyclotron-Resonance Plasma CVD
4. Epitaxial growth of silicon at low temperature by ultrahigh vacuum electron cyclotron resonance plasma chemical vapor deposition
5. Characterization of hydrogenated amorphous boron films prepared by electron cyclotron resonance plasma chemical vapor deposition method
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1. Large-Scale ECR-CVD Preparation of Integrated Thin-Film Structures For Space Applications;Protection of Space Materials from the Space Environment;2001
2. Structure, chemical bonding and electrochemical behavior of heteroatom-substituted carbons prepared by arc discharge and chemical vapor deposition;Solid State Sciences;2000-01
3. Large-Scale Electron Cyclotron Resonance Deposition of Protective Coatings for Space Applications;Protection of Materials and Structures from the Low Earth Orbit Space Environment;1999
4. Stability of plasma-deposited amorphous hydrogenated boron films;Thin Solid Films;1997-05
5. Deposition and characterization of dense and stable amorphous hydrogenated boron films at low substrate temperatures;Journal of Non-Crystalline Solids;1997-02
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