A high-power 626 nm diode laser system for Beryllium ion trapping
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4811093
Reference34 articles.
1. Quantum dynamics of cold trapped ions with application to quantum computation
2. Entangled states of trapped atomic ions
3. Quantum information processing and quantum control with trapped atomic ions
4. Quantum Computations with Cold Trapped Ions
5. Demonstration of a Fundamental Quantum Logic Gate
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1. Optimization of high power AlGaInP laser diodes at 626 nm;Optical and Quantum Electronics;2024-01-27
2. VECSEL systems for quantum information processing with trapped beryllium ions;Journal of the Optical Society of America B;2023-03-10
3. Performance of Temperature Tuned Red Laser Diode Employing Self Injection Locking Scheme;Frontiers in Optics / Laser Science;2020
4. 626-nm single-frequency semiconductor laser system operated near room temperature for mW-level second-harmonic generation at 313 nm;Review of Scientific Instruments;2019-06
5. A self-injection locked DBR laser for laser cooling of beryllium ions;Applied Physics B;2018-10-19
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