Highly efficient TE/TM mode switching of GaAsP/AlGaAs strained quantum‐well laser diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111956
Reference9 articles.
1. Reflectivity of mode at facet and oscillation mode in double-heterostructure injection lasers
2. Polarization control of an antireflection‐coated GaAlAs laser diode by an external optical feedback
3. Polarization bistability in external cavity semiconductor lasers
4. Polarization switching and bistability in an external cavity laser with a polarization‐sensitive saturable absorber
5. Theoretical gain of strained-layer semiconductor lasers in the large strain regime
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2. Red Shift in Optical Properties of Type-I Al0.45Ga0.55As/GaAs0.84P0.16/Al0.45Ga0.55As Nano-heterostructure under External Strain;IOP Conference Series: Materials Science and Engineering;2019-07-01
3. Superluminescent Diode at 0.8-µm with a GaAsP/AlGaAs Tensile-Strained Quantum Well;physica status solidi (a);2018-06-25
4. Structural design and fabrication of 830 nm GaAsP/AlGaAs low polarization superluminescent diode with tensile-strained wells;Journal of Materials Science: Materials in Electronics;2018-04-12
5. TM/TE polarization tuning and switching in tensile strained p-AlGaAs/GaAsP/n-AlGaAs heterostructures by uniaxial compression;Semiconductor Science and Technology;2016-02-01
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