Electrical resistivity of nanocrystalline Al-doped zinc oxide films as a function of Al content and the degree of its segregation at the grain boundaries-Reference-Cited by-同舟云学术

Electrical resistivity of nanocrystalline Al-doped zinc oxide films as a function of Al content and the degree of its segregation at the grain boundaries

Published:2010-11-15 Issue:10 Volume:108 Page:103721
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nasr B.,Dasgupta S.,Wang D.,Mechau N.,Kruk R.,Hahn H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3511346

Reference41 articles.

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3. A nanoparticulate indium tin oxide field-effect transistor with solid electrolyte gating

4. Efficient electron‐beam‐deposited ITO/n‐Si solar cells

5. Characteristics of Indium-Tin-Oxide/Silver/Indium-Tin-Oxide Sandwich Films and Their Application to Simple-Matrix Liquid-Crystal Displays

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