A study of HfO2 film interfaces with Si and SiO2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2161411
Reference25 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Thermodynamic stability of binary oxides in contact with silicon
3. Kinetics of interfacial layer formation during deposition of HfO2 on silicon
4. Chemical structure of the interface in ultrathin HfO2/Si films
5. Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during film growth and postannealing
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