The relationship among electromigration, passivation thickness, and common‐emitter current gain degradation within shallow junction NPN bipolar transistors-Reference-Cited by-同舟云学术

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The relationship among electromigration, passivation thickness, and common‐emitter current gain degradation within shallow junction NPN bipolar transistors

Published:1982-06 Issue:6 Volume:53 Page:4456-4462
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hemmert R. S.,Prokop G. S.,Lloyd J. R.,Smith P. M.,Calabrese G. M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.331231

Reference34 articles.

1. Ionic contamination-induced degradation of low current hFE

2. Avalanche degradation of hFE

3. Hole Currents in Thermally Grown SiO2

4. Current gain degradation induced by emitter-base avalanche breakdown in silicon planar transistors

5. Surface recombination in semiconductors

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