Strain-induced splitting of the valence band in epitaxially lifted-off GaAs films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2716869
Reference21 articles.
1. Effects of biaxial strain on the intervalence‐band absorption spectra of InGaAs/InP systems
2. Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells
3. Photoluminescence of GaAs/Si under hydrostatic pressure
4. Sub‐100 μA current operation of strained InGaAs quantum well lasers at low temperatures
5. Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition
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3. Tuning Hole Mobility of Individual p-Doped GaAs Nanowires by Uniaxial Tensile Stress;Nano Letters;2021-04-29
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