Measurement of excited states of Sb impurity in Si by traveling–wave method
Author:
Affiliation:
1. Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Sensui-machi, Tobata, Kitakyushu, Fukuoka 804-8550, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/jap/112/1/1.4731736.pdf?itemId=/content/aip/journal/jap/112/1/10.1063/1.4731736&mimeType=pdf&containerItemId=content/aip/journal/jap
Reference23 articles.
1. Stimulated Emission from Donor Transitions in Silicon
2. Multifrequency terahertz lasing from codoped silicon crystals
3. A silicon-based nuclear spin quantum computer
4. Towards the fabrication of phosphorus qubits for a silicon quantum computer
5. Electronic impurity levels in semiconductors
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1. Coupling behaviors of graphene/SiO2/Si structure with external electric field;AIP Advances;2017-02
2. Measurement of Ionization Energies of Nitrogen in 4H-SiC by Traveling-Wave Method;Japanese Journal of Applied Physics;2013-09-01
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