Trapping of Au in Si during pulsed laser irradiation: A comparison with ion beam induced segregation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100221
Reference11 articles.
1. Dependence of trapping and segregation of indium in silicon on the velocity of the liquid‐solid interface
2. Nonequilibrium segregation and trapping phenomena during ion-induced crystallization of amorphous Si
3. Twin formation and Au segregation during ion‐beam‐induced epitaxy of amorphous Si
4. Diffusion of implanted impurities in amorphous Si
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