Aluminum gallium nitride short-period superlattices doped with magnesium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123744
Reference19 articles.
1. High temperature characteristics of AlGaN/GaN modulation doped field‐effect transistors
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5. p‐type conduction in Mg‐doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
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