Vapor pressure dependence of native defect concentrations in GaP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330391
Reference9 articles.
1. Heat treatment of gallium phosphide
2. Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors
3. Simple Theoretical Estimates of the Schottky Constants and Virtual‐Enthalpies of Single Vacancy Formation in Zinc‐Blende and Wurtzite Type Semiconductors
4. Microscopic Mechanisms of Growth of Dark Line Defects in Double Heterostructure Lasers
5. Native defects and stoichiometry in GaAlAs
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1. Mechanism of compensation of the donor impurity in the near-surface layer of gap during heat treatment in phosphorus vapors;Semiconductors;2010-06
2. GaSb crystals pulled from non-stoichiometric solution at constant temperature;Journal of Crystal Growth;1997-04
3. Climb of edge dislocations in plastically deformed GaP;Philosophical Magazine A;1989-10
4. Point defects in GaP single crystals investigated by mechanical damping;Crystal Research and Technology;1987-08
5. Phosphorus pressure effects on GaP crystal quality in the solution growth;Physica Status Solidi (a);1984-07-16
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