Threshold‐wavelength and threshold‐temperature dependences of GaInAsP/InP lasers with frequency selective feedback operating in the 1.3‐ and 1.5‐μm regions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94263
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1. Long-wavelength InGaAsP/InP multiquantum well distributed feedback and distributed Bragg reflector lasers grown by chemical beam epitaxy;IEEE Journal of Quantum Electronics;1994-06
2. High power 0.98 μm InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum well lasers;Electronics Letters;1993-05-13
3. Long-wavelength InGaAsP/InP distributed feedback lasers incorporating gain-coupled mechanism;IEEE Photonics Technology Letters;1992-03
4. Effect of fixed emission wavelength on threshold current of InGaAsP semiconductor laser diodes;Electronics Letters;1992
5. The heteroepitaxial ridge-overgrown distributed feedback laser;IEEE Journal of Quantum Electronics;1985-06
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