Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy-Reference-Cited by-同舟云学术

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Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy

Published:2022-02-21 Issue:7 Volume:131 Page:075303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Naresh-Kumar G.¹^ORCID,Edwards P. R.¹^ORCID,Batten T.²^ORCID,Nouf-Allehiani M.¹^ORCID,Vilalta-Clemente A.³^ORCID,Wilkinson A. J.³^ORCID,Le Boulbar E.⁴^ORCID,Shields P. A.⁴^ORCID,Starosta B.¹^ORCID,Hourahine B.¹^ORCID,Martin R. W.¹^ORCID,Trager-Cowan C.¹^ORCID

Affiliation:

1. Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom

2. Renishaw plc, Wotton-under-Edge, Gloucestershire GL12 8JR, United Kingdom

3. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom

4. Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom

Funder

Engineering and Physical Sciences Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0080024

Reference31 articles.

1. Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope

2. Kinetics of Water-Rock Interaction

3. The influence of dislocations on crystal growth

4. Elastic constants, composition, and piezolectric polarization in InxAl1−xN: Fromab initiocalculations to experimental implications for the applicability of Vegard's rule

5. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simultaneous mapping of cathodoluminescence spectra and backscatter diffraction patterns in a scanning electron microscope;Nanotechnology;2024-07-11

2. Raman Characterization of the In-Plane Stress Tensor of Gallium Nitride;Materials;2023-03-10

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