Molybdenum oxide-base phase change resistive switching material
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5000410
Reference38 articles.
1. Reversible Electrical Switching Phenomena in Disordered Structures
2. Overview of candidate device technologies for storage-class memory
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5. Phase-Change and Redox-Based Resistive Switching Memories
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1. Field-induced reversible insulator-to-metal transition and the onset of ferroelectricity in molybdenum trioxide films;Journal of Applied Physics;2023-06-01
2. MoOx: A transparent phase change material for integrated photonics applications?;2022 IEEE Photonics Conference (IPC);2022-11
3. Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application;physica status solidi (RRL) – Rapid Research Letters;2021-07-26
4. The importance of contacts in Cu2GeTe3 phase change memory devices;Journal of Applied Physics;2020-10-28
5. Relation between density and optical contrasts upon crystallization in Cr2Ge2Te6 phase-change material: coexistence of a positive optical contrast and a negative density contrast;Journal of Physics D: Applied Physics;2019-06-13
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