Dual-donor codoping approach to realize low-resistance n-type ZnS semiconductor
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3624531
Reference25 articles.
1. Distribution of electric fields in ZnS:Mn single crystals during electroluminescence
2. A Ratiometric CdSe/ZnS Nanocrystal pH Sensor
3. Injection photodiodes based on low-resistivity ZnS single crystals
4. Predictor ofp-type doping in II-VI semiconductors
5. Coupling of codoped In and N impurities in ZnS:Ag: Experiment and theory
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1. Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis;Advanced Functional Materials;2018-06-25
2. Band engineering of ZnS by codoping for visible-light photocatalysis;Applied Physics A;2014-06-28
3. Effect of Ag-doping on microstructural, optical and electrical properties of sputtering-derived ZnS films;Journal of Alloys and Compounds;2013-02
4. Copper-alloyed ZnS as a p-type transparent conducting material;physica status solidi (a);2012-08-17
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