Layer intermixing in heavily carbon‐doped AlGaAs/GaAs superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346973
Reference29 articles.
1. Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures
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3. Mechanisms of doping‐enhanced superlattice disordering and of gallium self‐diffusion in GaAs
4. Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures
5. Application of the charged point‐defect model to diffusion and interdiffusion in GaAs
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1. Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn- and C-Doped InGaAs∕AlGaAs Quantum Well Laser Structures;Journal of The Electrochemical Society;2006
2. Suppression of thermal atomic interdiffusion in InGaAs/AlGaAs QW laser structures;SPIE Proceedings;2004-03-25
3. Improved Carrier Transport in Intermixed GaAs/AlGaAs Laser Structure With Multi-Quantum Wells Cladding;MRS Proceedings;2000
4. The effect of shallow donors and acceptors on AlAs/GaAs superlattices intermixing studied on atomic scale;Solid State Communications;1995-02
5. Al–Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon‐doped Al0.4Ga0.6As/GaAs superlattices: The As4pressure effect;Journal of Applied Physics;1993-08-15
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