Doping effects of C, Si and Ge in wurtzite [0001] GaN, AlN, and InN nanowires
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3607280
Reference43 articles.
1. Single-crystal gallium nitride nanotubes
2. Quasi-aligned single-crystalline GaN nanowire arrays
3. Coaxial Group III−Nitride Nanowire Photovoltaics
4. Polarized Raman Confocal Microscopy of Single Gallium Nitride Nanowires
5. [0001] Oriented Aluminum Nitride One-Dimensional Nanostructures: Synthesis, Structure Evolution, and Electrical Properties
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