Direct measurements of large near-band edge nonlinear index change from 1.48 to 1.55 μm in InGaAs/InAlGaAs multiquantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1585130
Reference13 articles.
1. Material figures of merit and implications to all-optical waveguide switching
2. Band-Gap—Resonant Nonlinear Refraction in III-V Semiconductors
3. Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures
4. Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition
5. Nonlinear spectroscopy of InGaAs/InAlAs multiple quantum well structures
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