Majority and minority electron and hole mobilities in heavily doped gallium aluminum arsenide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363339
Reference25 articles.
1. Hole and electron mobilities in heavily doped silicon: comparison of theory and experiment
2. Measurement of hole mobility in heavily doped n-type silicon
3. Electron mobility and free‐carrier absorption in GaAs: Determination of the compensation ratio
4. Majority and minority electron and hole mobilities in heavily doped GaAs
5. Effect of donor impurities on the conduction and valence bands of silicon
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