Numerical aspects on the simulation ofI‐Vcharacteristics and switching times of resonant tunneling diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345551
Reference15 articles.
1. Wigner-function model of a resonant-tunneling semiconductor device
2. Quantum transport modeling of resonant-tunneling devices
3. Self-consistent study of the resonant-tunneling diode
4. Wigner function study of a double quantum barrier resonant tunnelling diode
5. Quantum theory of hot electron tunnelling in microstructures
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