Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes
Author:
Funder
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4759003
Reference15 articles.
1. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
2. Defect related issues in the “current roll-off” in InGaN based light emitting diodes
3. The role of threading dislocations in the physical properties of GaN and its alloys
4. THE REASON FOR THE HIGH EMISSION EFFICIENCY OF GaInN/GaN BASED LEDS
5. A method to determine deep level profiles in highly compensated, wide band gap semiconductors
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