The effect of rapid thermal annealing on the precipitation of oxygen in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342589
Reference24 articles.
1. Point defects, diffusion processes, and swirl defect formation in silicon
2. Precipitation of oxygen in silicon: Some phenomena and a nucleation model
3. A theoretical study of the critical radius of precipitates and its application to silicon oxide in silicon
4. Denuded Zones in Czochralski Silicon Wafers
5. A new intrinsic gettering technique using microdefects in Czochralski silicon crystal: A new double preannealing technique
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1. Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results;IEEE Journal of Photovoltaics;2017-01
2. A reduced moment-based model for oxygen precipitation in silicon;Journal of Applied Physics;2013-12-28
3. Dislocation Motions in Czochralski Silicon Wafers Treated by Rapid Thermal Processing under Different Atmospheres;Solid State Phenomena;2013-10
4. Gettering effect in grain boundaries of multi-crystalline silicon;physica status solidi (c);2012-09-14
5. Mechanisms of Oxygen Precipitation in Cz-Si Wafers Subjected to Rapid Thermal Anneals;Journal of The Electrochemical Society;2011
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