Erosion and impurity transport for the edge localized mode suppression window in KSTAR

Author:

Navarro Marcos1ORCID,Van Blarcum Jonathan1ORCID,Frerichs Heinke1ORCID,Romazanov Juri2ORCID,Kirschner Andreas2ORCID,Park Jong-Kyu3ORCID,Yang Seong-Moo3,Schmitz Oliver1ORCID

Affiliation:

1. University of Wisconsin-Madison 1 , Madison, Wisconsin 53706, USA

2. Institut für Energie und Klimaforschung 4 (IEK-4), Forschungszentrum Jülich 2 , Jülich 52428, Germany

3. Princeton Plasma Physics Laboratory, Princeton University 3 , Princeton, New Jersey 08540, USA

Abstract

A 3D analysis of plasma wall interactions and global impurity transport for the edge localized mode suppression window in KSTAR during H-Mode discharges has shown that carbon erosion at the divertor plates is a strong function of the resonant magnetic perturbation (n = 1) coil current and relative phasing. The Generalized Perturbation Equilibrium Code was used to determine a realistic initial perturbed plasma equilibrium, and EMC3-EIRENE was used to calculate the resulting scrape-off layer plasma used in this study as a fixed background for the ERO2.0 plasma–material interaction model. The resulting transport leads to deposition of impurities along the targets positioned at the high-field side of the device. An attempt at calculating the resulting effective charge state has demonstrated a similar dependence on the perturbation coil current and has been able to determine a window for the experimentally observed values of Zeff by including contributions of all ionized carbon charge states and deuterium.

Funder

U.S. Department of Energy

National Energy Research Scientific Computing Center

Publisher

AIP Publishing

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3