Sensing performance of sub-100-nm vanadium oxide films for room temperature thermal detection applications

Author:

Scott Ethan A.1ORCID,Singh Manish K.2ORCID,Barber John P.3ORCID,Rost Christina M.3ORCID,Ivanov Sergei2ORCID,Watt John2ORCID,Pete Douglas1,Sharma Peter4ORCID,Lu Tzu-Ming1ORCID,Harris C. Thomas1ORCID

Affiliation:

1. Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

2. Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

3. Department of Physics and Astronomy, James Madison University, Harrisonburg, Virginia 22807, USA

4. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Abstract

Vanadium oxide films are widely employed as thermal detectors in uncooled infrared detection systems due to their high temperature coefficient of resistance near room temperature. One strategy toward maximizing detectivity and reducing the thermal time constant in these systems is to minimize the system platform dimensions. This approach necessitates thinner film thicknesses ([Formula: see text]100 nm), for which there is little information regarding thermal sensing performance. Herein, we report on the sensitivity of reactively sputtered vanadium oxide thin film resistive thermometers nominally ranging from 100 to 25 nm and assess the influence of thermal annealing. We demonstrate that films in this minimum limit of thickness maintain a high temperature coefficient while additionally providing an enhancement in characteristics of the noise equivalent power.

Funder

U.S. Department of Energy

National Nuclear Security Administration

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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