Interface-controlled gate of GaAs metal–semiconductor field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1467975
Reference13 articles.
1. Effects of interface states on submicron GaAs metal–semiconductor field-effect transistors assessed by gate leakage current
2. Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates
3. Schottky barriers: An effective work function model
4. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
5. Interface-controlled Au/GaAs Schottky contact with surface sulfidation and interfacial hydrogenation
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1. Interfacial Cleaning Effects in Passivating InSb with Al[sub 2]O[sub 3] by Atomic Layer Deposition;Electrochemical and Solid-State Letters;2008
2. Effects of Surface Treatments on Interfacial Self-Cleaning in Atomic Layer Deposition of Al[sub 2]O[sub 3] on InSb;Journal of The Electrochemical Society;2008
3. Ballistic electron and photocurrent transport in Au-molecular layer-GaAs diodes;Journal of Applied Physics;2007-07
4. Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition;Solid-State Electronics;2005-05
5. Passivation of GaAs field-effect transistors in diluted S2Cl2 solution;Applied Surface Science;2004-04
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