Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications-Reference-Cited by-同舟云学术

Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications

Published:2011-12-12 Issue:24 Volume:99 Page:243103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bastard A.,Bastien J. C.,Hyot B.,Lhostis S.,Mompiou F.,Bonafos C.,Servanton G.,Borowiak C.,Lorut F.,Bicais-Lepinay N.,Toffoli A.,Sandhya C.,Fantini A.,Perniola L.,Gourvest E.,Maitrejean S.,Roule A.,Sousa V.,Bensahel D.,André B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3668095

Reference19 articles.

1. Nucleation, growth, and phase transformation mechanism of Ge2 Sb2 Te5 thin films

2. Crystallization and Melting Kinetics of Se-Doped Fast-Growth Sb70Te30Phase-Change Recording Films

3. Phase transitions in Ge–Sb phase change materials

4. Effects of nitrogen doping on the properties of Ge15Sb85 phase-change thin film

5. Local structural and optical properties of GeSb phase-change materials

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