Improved on-state performance of AlGaN/GaN Fin-HEMTs by reducing the length of the nanochannel-Reference-Cited by-同舟云学术

Improved on-state performance of AlGaN/GaN Fin-HEMTs by reducing the length of the nanochannel

Published:2017-05-08 Issue:19 Volume:110 Page:193502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Meng¹²,Ma Xiao-Hua¹²,Mi Min-Han²³,He Yun-Long¹²,Hou Bin¹²,Zheng Jia-Xin¹²,Zhu Qing¹²^ORCID,Chen Li-Xiang¹²,Zhang Peng¹²,Yang Ling¹²

Affiliation:

1. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China

2. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China

3. School of Mechano-electric Engineering, Xidian University, Xi'an 710071, People's Republic of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4983557

Reference19 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

3. Tri-Gate Normally-Off GaN Power MISFET

4. AlGaN/GaN FinFET With Extremely Broad Transconductance by Side-Wall Wet Etch

5. Nanowire transistors without junctions

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