Carrier concentration induced band-gap shift in Al-doped Zn1−xMgxO thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2424308
Reference14 articles.
1. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films
2. Low-resistivity, stable p-type ZnO thin films realized using a Li–N dual-acceptor doping method
3. MgxZn1−xO as a II–VI widegap semiconductor alloy
4. Structural Characterization and Photoluminescent Properties of Zn 1- x Mg x O Films on Silicon
5. Fabrication of wide-band-gap MgxZn1−xO quasi-ternary alloys by molecular-beam epitaxy
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