Diode and inhomogeneity assisted extremely large magnetoresistance in silicon-Reference-Cited by-同舟云学术

Diode and inhomogeneity assisted extremely large magnetoresistance in silicon

Published:2017-07-24 Issue:4 Volume:111 Page:042406
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Singh Rajan¹²,Luo Zhaochu¹²,Lu Ziyao¹²,Saleemi Awais Siddique¹²,Xiong Chengyue¹²,Zhang Xiaozhong¹²³

Affiliation:

1. Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China

2. Beijing National Center for Electron Microscopy, Tsinghua University, Beijing 100084, People's Republic of China

3. Centre for Brain-Inspired Computing Research, Tsinghua University, Beijing 100084, People's Republic of China

Funder

National Key R&D Program of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4996493

Reference35 articles.

1. Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices

2. Tunneling between ferromagnetic films

3. Low Temperature Magnetoresistance and the Magnetic Phase Diagram ofLa1−xCaxMnO3

4. Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange

5. Oscillatory magnetic exchange coupling through thin copper layers

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