Origin of mobility enhancement by chemical treatment of gate-dielectric surface in organic thin-film transistors: Quantitative analyses of various limiting factors in pentacene thin films-Reference-Cited by-同舟云学术

Origin of mobility enhancement by chemical treatment of gate-dielectric surface in organic thin-film transistors: Quantitative analyses of various limiting factors in pentacene thin films

Published:2015-11-07 Issue:17 Volume:118 Page:175502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Matsubara R.¹,Sakai Y.²,Nomura T.²,Sakai M.²,Kudo K.²,Majima Y.³^ORCID,Knipp D.⁴,Nakamura M.¹

Affiliation:

1. Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma 630-0192, Japan

2. Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

3. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan

4. Research Center for Functional Materials and Nanomolecular Science, Electronic Devices and Nanophotonics Laboratory, Jacobs University Bremen, 28759 Bremen, Germany

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935024

Reference52 articles.

1. Organic thin-film transistor-driven polymer-dispersed liquid crystal displays on flexible polymeric substrates

2. All-organic active matrix flexible display

3. Progress Toward Development of All-Printed RFID Tags: Materials, Processes, and Devices