Gate bias instability in hydrogenated polycrystalline silicon thin-film transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1289525
Reference17 articles.
1. Effect of pressure on the growth of crystallites of low‐pressure chemical‐vapor‐deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin‐film transistors
2. Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors
3. Excimer laser annealing of amorphous and solid-phase-crystallized silicon films
4. Minority‐carrier diffusion lengths in amorphous silicon‐based alloys
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